SIGC32T120R3EX1SA3 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	SIGC32T120R3EX1SA3
Description	N-CHANNEL; Maximum Collector Current (IC): 25 A; Maximum Operating Temperature: 150 Cel; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Gate-Emitter Threshold Voltage: 6.5 V;
Datasheet	SIGC32T120R3EX1SA3 Datasheet
In Stock	604

NAME	DESCRIPTION
Maximum Collector Current (IC):	25 A
Maximum Collector-Emitter Voltage:	1200 V
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Maximum Gate-Emitter Threshold Voltage:	6.5 V
Maximum Operating Temperature:	150 Cel
Maximum Gate-Emitter Voltage:	20 V
Sub-Category:	Insulated Gate BIP Transistors
Peak Reflow Temperature (C):	NOT SPECIFIED
Polarity or Channel Type:	N-CHANNEL

Pricing (USD)

Qty.	Unit Price	Ext. Price
604	-	-

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