Infineon Technologies - SIGC54T65R3EX1SA2

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SIGC54T65R3EX1SA2 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SIGC54T65R3EX1SA2
Description N-CHANNEL; Maximum Collector Current (IC): 100 A; Maximum Operating Temperature: 175 Cel; Maximum Gate-Emitter Threshold Voltage: 6.4 V; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Gate-Emitter Voltage: 20 V;
Datasheet SIGC54T65R3EX1SA2 Datasheet
In Stock691
NAME DESCRIPTION
Maximum Collector Current (IC): 100 A
Maximum Collector-Emitter Voltage: 650 V
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Maximum Gate-Emitter Threshold Voltage: 6.4 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: N-CHANNEL
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