Infineon Technologies - SIGC57T120R3

SIGC57T120R3 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SIGC57T120R3
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 50 A; Package Body Material: UNSPECIFIED; Nominal Turn On Time (ton): 135 ns;
Datasheet SIGC57T120R3 Datasheet
In Stock984
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 50 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Sub-Category: Insulated Gate BIP Transistors
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN LEAD
JESD-609 Code: e0
Nominal Turn Off Time (toff): 610 ns
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 1200 V
Terminal Position: UPPER
Nominal Turn On Time (ton): 135 ns
Package Style (Meter): UNCASED CHIP
JESD-30 Code: R-XUUC-N
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
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