Infineon Technologies - SIGC57T120R3LEX1SA3

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SIGC57T120R3LEX1SA3 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SIGC57T120R3LEX1SA3
Description N-CHANNEL; Maximum Collector Current (IC): 50 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Operating Temperature: 150 Cel; Peak Reflow Temperature (C): NOT SPECIFIED;
Datasheet SIGC57T120R3LEX1SA3 Datasheet
In Stock950
NAME DESCRIPTION
Maximum Collector Current (IC): 50 A
Maximum Collector-Emitter Voltage: 1200 V
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Maximum Gate-Emitter Threshold Voltage: 6.5 V
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: N-CHANNEL
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