Infineon Technologies - SP000702548

  1. Home
  2. Infineon Technologies - SP000702548
SP000702548 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number SP000702548
Description N-Channel; Maximum Power Dissipation (Abs): 333 W; Maximum Collector Current (IC): 100 A; Maximum Collector-Emitter Voltage: 600 V; Nominal Turn Off Time (toff): 297 ns; Maximum Gate-Emitter Voltage: 20 V;
Datasheet SP000702548 Datasheet
In Stock48
NAME DESCRIPTION
Nominal Turn Off Time (toff): 297 ns
Maximum Collector Current (IC): 100 A
Maximum Power Dissipation (Abs): 333 W
Maximum Collector-Emitter Voltage: 600 V
Nominal Turn On Time (ton): 54 ns
Transistor Element Material: SILICON
Maximum Gate-Emitter Threshold Voltage: 5.7 V
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Polarity or Channel Type: N-Channel
Maximum VCEsat: 2.3 V
Minimum Operating Temperature: -40 Cel
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
48 - -

Popular Products

Category Top Products

NGTG15N60S1EG by Onsemi

NGTG15N60S1EG

Onsemi

NGTG15N60S1EG by Onsemi is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 650V and a max collector current of 30A. It is commonly used in motor control applications due to its nominal turn on time of 93ns and max power dissipation of 117W.
APT100GN60B2G by Advanced Power Technology

APT100GN60B2G

Advanced Power Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 229 A; JESD-30 Code: R-PSIP-T3; Maximum Collector-Emitter Voltage: 600 V;
IRGR2B60KDPBF by International Rectifier

IRGR2B60KDPBF

International Rectifier

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 35 W; Maximum Collector Current (IC): 6.3 A; Maximum Gate-Emitter Threshold Voltage: 6 V; Maximum Collector-Emitter Voltage: 600 V;
FF600R12ME4B11BPSA2 by Infineon Technologies

FF600R12ME4B11BPSA2

Infineon Technologies

Insulated Gate Bipolar Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
IXGH30N120B3D1 by Littelfuse

IXGH30N120B3D1

Littelfuse

IXGH30N120B3D1 by Littelfuse is an N-CHANNEL IGBT with 1200V VCE, 30A IC, and 300W power dissipation. Ideal for power control applications, it features a built-in diode, 380ns fall time, and -55 to 150°C operating temperature range.
IRGP4063DPBF by International Rectifier

IRGP4063DPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 330 W; Maximum Collector Current (IC): 96 A; Case Connection: COLLECTOR;
IXBK55N300 by IXYS Corporation

IXBK55N300

IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 625 W; Maximum Collector Current (IC): 130 A; Terminal Form: THROUGH-HOLE;
IRG4PC30FPBF by International Rectifier

IRG4PC30FPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 31 A; Package Body Material: PLASTIC/EPOXY;
APT50GP60J by Microsemi

APT50GP60J

Microsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 100 A; Case Connection: ISOLATED; Transistor Element Material: SILICON;
FGH40N65UFDTU-F085 by Onsemi

FGH40N65UFDTU-F085

Onsemi

FGH40N65UFDTU-F085 by Onsemi is an N-CHANNEL IGBT with VCEsat of 2.4V and IC of 80A, ideal for POWER CONTROL applications. It has a max VCE of 650V, operating temperature up to 150°C, and a turn-off time (toff) of 152ns. This RECTANGULAR package transistor features a built-in diode and matte tin finish for efficient performance in various power control systems.
F4150R12KS4BOSA1 by Infineon Technologies

F4150R12KS4BOSA1

Infineon Technologies

F4150R12KS4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 4 elements in a bridge configuration. It has a max collector-emitter voltage of 1200V and can handle a collector current of 180A, making it ideal for power control applications. With a turn-off time of 390ns and turn-on time of 190ns, this UL RECOGNIZED transistor is designed for high-power operations.
FGL40N120ANDTU by Onsemi

FGL40N120ANDTU

Onsemi

FGL40N120ANDTU by Onsemi is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max collector current of 64A. It has a nominal turn-off time of 165ns and a turn-on time of 45ns, making it ideal for power control applications requiring fast switching capabilities. The transistor comes in a rectangular package style with flange mount and matte tin terminal finish.
IRG4PC40UD-E by International Rectifier

IRG4PC40UD-E

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 40 A; JEDEC-95 Code: TO-247AD; Package Body Material: PLASTIC/EPOXY;
IRG4BC30FPBF by International Rectifier

IRG4BC30FPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 31 A; Maximum Operating Temperature: 150 Cel;
FGH60N60SFDTU by Fairchild Semiconductor

FGH60N60SFDTU

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 378 W; Maximum Collector Current (IC): 120 A; Maximum Operating Temperature: 150 Cel;
IXGH6N170A by Littelfuse

IXGH6N170A

Littelfuse

IXGH6N170A by Littelfuse is an N-CHANNEL IGBT transistor with 1700V max collector-emitter voltage, 75W power dissipation, and 65ns fall time. Ideal for power control applications due to its single configuration and through-hole terminal form.
IRG4BC30KD-SPBF by Infineon Technologies

IRG4BC30KD-SPBF

Infineon Technologies

IRG4BC30KD-SPBF by Infineon Technologies is an N-channel insulated gate bipolar transistor (IGBT) with a max collector-emitter voltage of 600V and a max collector current of 28A. It is commonly used in motor control applications due to its single configuration with built-in diode and small outline package style.
IGW15T120FKSA1 by Infineon Technologies

IGW15T120FKSA1

Infineon Technologies

IGW15T120FKSA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max collector current of 30A. It has a nominal turn-off time of 720ns and nominal turn-on time of 85ns, making it ideal for power control applications. The package style is flange mount with through-hole terminals, suitable for high-power operations up to 150°C.
FGL60N100BNTD by Fairchild Semiconductor

FGL60N100BNTD

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 180 W; Maximum Collector Current (IC): 60 A; Terminal Finish: MATTE TIN;
FGH40N60UFTU by Onsemi

FGH40N60UFTU

Onsemi

FGH40N60UFTU by Onsemi is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and max collector current of 80A. It has a power dissipation of 290W, making it suitable for power control applications. With a turn-off time of 190ns and turn-on time of 110ns, it offers efficient switching performance in various industrial settings.