Infineon Technologies - SP000840426

  1. Home
  2. Infineon Technologies - SP000840426
SP000840426 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number SP000840426
Description Small Signal Field-Effect Transistors;
Datasheet SP000840426 Datasheet
In Stock926
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
926 - -

Popular Products

Category Top Products

BC548B by Unisonic Technologies

BC548B

Unisonic Technologies

NPN; Configuration: SINGLE; Surface Mount: NO; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
FDV304P by Fairchild Semiconductor

FDV304P

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (ID): .46 A;
BSS84PWH6327 by Infineon Technologies

BSS84PWH6327

Infineon Technologies

BSS84PWH6327 by Infineon is a P-CHANNEL FET with 60V DS breakdown voltage, 0.15A max drain current, and 8 ohm max on resistance. It is used in small outline packages for applications requiring low power dissipation and high operating temperatures up to 150°C.
2N7002K by Continental Device India

2N7002K

Continental Device India

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Transistor Element Material: SILICON; Package Style (Meter): SMALL OUTLINE;
SBSS84LT1G by Onsemi

SBSS84LT1G

Onsemi

SBSS84LT1G by Onsemi is a P-CHANNEL FET with 50V DS Breakdown Voltage, 0.13A Drain Current, and 10Ω On Resistance. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating in ENHANCEMENT MODE, it has GULL WING terminals and can handle up to 150°C temperature.
2N7002BKW,115 by Nexperia

2N7002BKW,115

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .33 W; No. of Terminals: 3; JESD-30 Code: R-PDSO-G3;
2N7002,235 by Nexperia

2N7002,235

Nexperia

2N7002,235 by Nexperia is a N-CHANNEL FET with 60V DS breakdown voltage and 0.3A ID. It's used for switching applications in enhancement mode, featuring a built-in diode. With a max operating temp of 150°C, it's ideal for surface mount designs requiring small outline packages.
2N7000 by Nte Electronics

2N7000

Nte Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; Transistor Element Material: SILICON; Terminal Form: THROUGH-HOLE;
BSS138 by NXP Semiconductors

BSS138

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 3; Maximum Drain Current (ID): .2 A; Operating Mode: ENHANCEMENT MODE;
NUD3124DMT1G by Onsemi

NUD3124DMT1G

Onsemi

NUD3124DMT1G by Onsemi is a N-CHANNEL FET with 2 elements, diode, and resistor. Operating in enhancement mode, it has a max ID of 0.15A and RDS(on) of 1.4 ohm. Ideal for switching applications due to its small outline package style and temp rating of 150°C.
MMBF170 by Fairchild Semiconductor

MMBF170

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Drain Current (ID): .5 A; Transistor Application: SWITCHING;
NDC7001C by Onsemi

NDC7001C

Onsemi

NDC7001C by Onsemi is a Small Signal FET with N-Channel and P-Channel polarity. It features 2 elements with built-in diode for switching applications. With a max drain current of 0.51A, it operates in enhancement mode at up to 150°C, making it suitable for various electronic devices.
BC548B by Shanghai Lunsure Electronic Technology

BC548B

Shanghai Lunsure Electronic Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Terminal Finish: Tin/Lead (Sn/Pb); No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
SI4459ADY-T1-GE3 by Vishay Intertechnology

SI4459ADY-T1-GE3

Vishay Intertechnology

SI4459ADY-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 30V DS Breakdown Voltage, 29A Drain Current, and 0.005 ohm On Resistance. Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation in a RECTANGULAR package with GULL WING terminals.
2N7002DW by Infineon Technologies

2N7002DW

Infineon Technologies

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G6; Package Body Material: PLASTIC/EPOXY; Minimum Operating Temperature: -55 Cel;
2N7000TA by Onsemi

2N7000TA

Onsemi

2N7000TA by Onsemi is a N-CHANNEL FET with 0.2A max drain current and 0.4W max power dissipation. Ideal for low-power applications, it features a 5 ohm max drain-source resistance in a cylindrical package style.
DMN65D8L-7 by Diodes Incorporated

DMN65D8L-7

Diodes Incorporated

Diodes Inc.'s DMN65D8L-7 is a N-channel FET with 60V DS breakdown voltage, 0.27A ID, and 4 ohm RDS. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and enhancement mode operation. Features include single configuration with built-in diode, Gull Wing terminals, and small outline package style.
FDV301N by Onsemi

FDV301N

Onsemi

FDV301N by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage and 0.22A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 0.35W. This small outline transistor has a temperature range of -55 to 150 °C and features a built-in diode for efficient performance.
SI2329DS-T1-GE3 by Vishay Intertechnology

SI2329DS-T1-GE3

Vishay Intertechnology

SI2329DS-T1-GE3 by Vishay Intertechnology is a P-channel FET with 8V DS breakdown voltage and 6A max drain current. Ideal for switching applications, it features a single configuration with built-in diode, operates in enhancement mode, and has a max power dissipation of 2.5W.
MMBF170Q-13-F by Diodes Incorporated

MMBF170Q-13-F

Diodes Incorporated

Small Signal Field-Effect Transistors; JESD-609 Code: e3; Terminal Finish: MATTE TIN; Peak Reflow Temperature (C): 260;