Infineon Technologies - SP001061264

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SP001061264 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SP001061264
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Element Material: SILICON; Avalanche Energy Rating (EAS): 230 mJ; Minimum DS Breakdown Voltage: 40 V;
Datasheet SP001061264 Datasheet
In Stock856
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 230 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Feedback Capacitance (Crss): 58 pF
Maximum Drain Current (ID): 20 A
Maximum Pulsed Drain Current (IDM): 80 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Minimum Operating Temperature: -55 Cel
No. of Terminals: 8
Minimum DS Breakdown Voltage: 40 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Reference Standard: AEC-Q101
Maximum Drain-Source On Resistance: .0072 ohm
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