Infineon Technologies - SP001130972

SP001130972 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SP001130972
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 63 W; Maximum Operating Temperature: 150 Cel; Minimum DS Breakdown Voltage: 800 V;
Datasheet SP001130972 Datasheet
In Stock509
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 170 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 3.9 A
JEDEC-95 Code: TO-252
Maximum Pulsed Drain Current (IDM): 12 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Minimum Operating Temperature: -55 Cel
No. of Terminals: 2
Minimum DS Breakdown Voltage: 800 V
Maximum Power Dissipation (Abs): 63 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: 1.4 ohm
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Pricing (USD)

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