Infineon Technologies - SP001197126

SP001197126 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SP001197126
Description N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 600 W; Maximum Gate-Emitter Threshold Voltage: 6.45 V; Maximum Gate-Emitter Voltage: 20 V;
Datasheet SP001197126 Datasheet
In Stock681
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: COMPLEX
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 6.45 V
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Minimum Operating Temperature: -40 Cel
Nominal Turn Off Time (toff): 350 ns
No. of Terminals: 15
Maximum Power Dissipation (Abs): 600 W
Maximum Collector-Emitter Voltage: 1200 V
Terminal Position: UPPER
Nominal Turn On Time (ton): 165 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X15
No. of Elements: 4
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Reference Standard: UL APPROVED
Case Connection: ISOLATED
Maximum VCEsat: 1.75 V
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