Infineon Technologies - SP001396908

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SP001396908 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SP001396908
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 86 W; Transistor Application: SWITCHING; Minimum DS Breakdown Voltage: 650 V;
Datasheet SP001396908 Datasheet
In Stock102
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 10.1 A
Maximum Pulsed Drain Current (IDM): 18 A
Surface Mount: YES
No. of Terminals: 2
Maximum Power Dissipation (Abs): 86 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .65 ohm
Avalanche Energy Rating (EAS): 142 mJ
JEDEC-95 Code: TO-252
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -40 Cel
Minimum DS Breakdown Voltage: 650 V
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