Infineon Technologies - SPD06N80C3ATMA1

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SPD06N80C3ATMA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SPD06N80C3ATMA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: GULL WING; No. of Elements: 1; Minimum DS Breakdown Voltage: 800 V;
Datasheet SPD06N80C3ATMA1 Datasheet
In Stock10,918
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 6 A
Maximum Pulsed Drain Current (IDM): 18 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .9 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 230 mJ
Other Names: SPD06N80C3ATMA1CT
INFINFSPD06N80C3ATMA1
SPD06N80C3ATMA1DKR
2156-SPD06N80C3ATMA1
SPD06N80C3ATMA1TR
SP001117772
JEDEC-95 Code: TO-252AA
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 800 V
Additional Features: AVALANCHE RATED, HIGH VOLTAGE
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