SPD06N80C3BTMA1 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	SPD06N80C3BTMA1
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: AVALANCHE RATED, HIGH VOLTAGE; Package Style (Meter): SMALL OUTLINE; Terminal Position: SINGLE;
Datasheet	SPD06N80C3BTMA1 Datasheet
In Stock	1,203

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	40
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	6 A
Maximum Pulsed Drain Current (IDM):	18 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	2
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.9 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	230 mJ
Other Names:	2156-SPD06N80C3BTMA1 SP000318350 SP000077606 SPD06N80C3INTR-NDR SPD06N80C3XTINCT SPD06N80C3BTMA1TR SPD06N80C3INCT SPD06N80C3 SPD06N80C3INDKR SPD06N80C3BTMA1DKR INFINFSPD06N80C3BTMA1 SPD06N80C3XTINTR SPD06N80C3INDKR-NDR SPD06N80C3INTR-ND SPD06N80C3XTINCT-ND SPD06N80C3XTINTR-ND SPD06N80C3INCT-ND SPD06N80C3INCT-NDR SPD06N80C3INTR SPD06N80C3XT SPD06N80C3BTMA1CT SPD06N80C3INDKR-ND SPD06N80C3T
JEDEC-95 Code:	TO-252AA
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	800 V
Qualification:	Not Qualified
Additional Features:	AVALANCHE RATED, HIGH VOLTAGE
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,203	-	-

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