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| Manufacturer | Infineon Technologies |
|---|---|
| Manufacturer's Part Number | SPD08P06PGBTMA1 |
| Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-252; Terminal Finish: TIN; Maximum Operating Temperature: 175 Cel; |
| Datasheet | SPD08P06PGBTMA1 Datasheet |
| In Stock | 23,383 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 8.8 A |
| Maximum Pulsed Drain Current (IDM): | 35.2 A |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| No. of Terminals: | 2 |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PSSO-G2 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Maximum Drain-Source On Resistance: | .3 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Avalanche Energy Rating (EAS): | 70 mJ |
| Other Names: |
SPD08P06PGBTMA1DKR SPD08P06PGINCT SPD08P06PGINDKRINACTIVE SP000096087 SPD08P06PG 2156-SPD08P06PGBTMA1 SPD08P06PGBTMA1CT SPD08P06PGINDKR SPD08P06PGINTR-ND INFINFSPD08P06PGBTMA1 SPD08P06P G SPD08P06PGINCT-ND SP000450534 SPD08P06PGINTR SPD08P06PGXT SPD08P06PGINDKR-ND SPD08P06PGINTRINACTIVE SPD08P06P G-ND SPD08P06PGBTMA1TR SPD08P06PGINCTINACTIVE |
| JEDEC-95 Code: | TO-252 |
| Polarity or Channel Type: | P-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum DS Breakdown Voltage: | 60 V |
| Qualification: | Not Qualified |
| Additional Features: | AVALANCHE RATED |









