Infineon Technologies - SPP11N80C3XKSA1

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SPP11N80C3XKSA1 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SPP11N80C3XKSA1
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-609 Code: e3; Terminal Position: SINGLE; Operating Mode: ENHANCEMENT MODE;
Datasheet SPP11N80C3XKSA1 Datasheet
In Stock687
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 11 A
Maximum Pulsed Drain Current (IDM): 33 A
Surface Mount: NO
Terminal Finish: TIN
No. of Terminals: 3
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .45 ohm
Avalanche Energy Rating (EAS): 470 mJ
Other Names: SP000683158
SPP11N80C3XTIN
SPP11N80C3IN-NDR
SPP11N80C3IN-ND
SPP11N80C3
SPP11N80C3IN
SPP11N80C3XTIN-ND
SPP11N80C3X
SPP11N80C3XK
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 800 V
Qualification: Not Qualified
Additional Features: AVALANCHE RATED
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