SPP20N60C3XK by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	SPP20N60C3XK
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Maximum Pulsed Drain Current (IDM): 62.1 A; Operating Mode: ENHANCEMENT MODE;
Datasheet	SPP20N60C3XK Datasheet
In Stock	26,056

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	690 mJ
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	20.7 A
JEDEC-95 Code:	TO-220AB
Maximum Pulsed Drain Current (IDM):	62.1 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
No. of Terminals:	3
Minimum DS Breakdown Voltage:	600 V
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Additional Features:	AVALANCHE RATED, HIGH RELIABILITY
Maximum Drain-Source On Resistance:	.19 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
26,056	-	-

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