Infineon Technologies - SPU01N50M2

SPU01N50M2 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number SPU01N50M2
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 11 W; Package Style (Meter): IN-LINE; Maximum Pulsed Drain Current (IDM): 1.6 A;
Datasheet SPU01N50M2 Datasheet
In Stock137
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): .8 A
Maximum Pulsed Drain Current (IDM): 1.6 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 500 V
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 11 W
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Additional Features: AVALANCHE RATED
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): .8 A
Maximum Drain-Source On Resistance: 6 ohm
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Pricing (USD)

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