Infineon Technologies - STK14CC8-RF25I

  1. Home
  2. Infineon Technologies - STK14CC8-RF25I
STK14CC8-RF25I by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number STK14CC8-RF25I
Description Other Memory ICs;
Datasheet STK14CC8-RF25I Datasheet
In Stock688
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
688 - -

Popular Products

Category Top Products

M28F221-80XN5 by STMicroelectronics

M28F221-80XN5

STMicroelectronics

Other Memory ICs;
TMS44C251-10DJ by Texas Instruments

TMS44C251-10DJ

Texas Instruments

TMS44C251-10DJ by Texas Instruments is a 256KX4 memory IC with 262144 words, 1048576 bit memory density, and 100 ns max access time. It operates at a nominal voltage of 5V and is suitable for commercial applications requiring small outline package style and dual terminal position.
ST25DV64K-IER6T3 by STMicroelectronics

ST25DV64K-IER6T3

STMicroelectronics

ST25DV64K-IER6T3 by STMicroelectronics is a 64KX1 memory circuit with 65536 bit memory density. Operating at 3.3V, it has a temperature range of -40 to 85 °C and is suitable for industrial applications requiring small outline, thin profile ICs.
DM87S191AJ/A+ by Texas Instruments

DM87S191AJ/A+

Texas Instruments

Other Memory ICs;
DS2411X by Maxim Integrated

DS2411X

Maxim Integrated

DS2411X by Maxim Integrated is a 64-bit MEMORY CIRCUIT with 64x1 organization. It operates in ASYNCHRONOUS mode, with power supplies of 2/5V. This PLASTIC/EPOXY IC, in GRID ARRAY package style, is ideal for industrial applications requiring low standby current and fine pitch terminals.
MT29F4G01ADAGDWB-IT:G by Micron Technology

MT29F4G01ADAGDWB-IT:G

Micron Technology

MEMORY CIRCUIT; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
TMX27C512-20 by Texas Instruments

TMX27C512-20

Texas Instruments

Other Memory ICs;
M36W108T100ZN6 by STMicroelectronics

M36W108T100ZN6

STMicroelectronics

M36W108T100ZN6 by STMicroelectronics is a versatile memory IC featuring 1M x 8 organization, operating in asynchronous mode. It supports a supply voltage range of 2.7V to 3.6V and operates within -40 °C to 85°C, making it ideal for industrial applications. Its thin profile and surface mount design enhance space efficiency in electronic devices.
M36W108T100ZN1 by STMicroelectronics

M36W108T100ZN1

STMicroelectronics

M36W108T100ZN1 by STMicroelectronics is a mixed memory IC featuring 1M x 8 organization with FLASH+SRAM technology. It operates asynchronously at voltages b/w 2.7V and 3.6V, with a max access time of 100 ns. Ideal for commercial applications, it supports surface mount in a very thin profile package.
SNC54170J by Texas Instruments

SNC54170J

Texas Instruments

SNC54170J by Texas Instruments is a MIL-STD-883 Class B (Modified) rated TTL memory IC with 16 terminals and a supply voltage of 5V. It operates in temperatures ranging from -55°C to 125°C, making it suitable for military-grade applications requiring reliable performance in harsh environments. The ceramic package body material ensures durability and robustness for long-term use.
DS2401P+T&R-C01 by Maxim Integrated

DS2401P+T&R-C01

Maxim Integrated

MEMORY CIRCUIT;
M36W216BI85ZA1 by STMicroelectronics

M36W216BI85ZA1

STMicroelectronics

M36W216BI85ZA1 from STMicroelectronics is a low-profile, asynchronous memory IC featuring 16Mbit density with FLASH+SRAM technology. It operates at a nominal voltage of 3V and supports temperatures up to 70 °C. Ideal for compact applications requiring efficient data storage and retrieval.
TMS27C32-15NE by Texas Instruments

TMS27C32-15NE

Texas Instruments

Other Memory ICs;
SN74ACT2151-25N by Texas Instruments

SN74ACT2151-25N

Texas Instruments

SN74ACT2151-25N by Texas Instruments is a 1KX12 MEMORY CIRCUIT IC with 25 ns access time, suitable for COMMERCIAL applications. It operates at 5V, has 28 terminals in IN-LINE package style, and offers a memory density of 12288 bits. Ideal for various electronic devices requiring fast memory access within the temperature range of 0 to 70°C.
M36W0R5020T0ZAQT by STMicroelectronics

M36W0R5020T0ZAQT

STMicroelectronics

M36W0R5020T0ZAQT by STMicroelectronics is a versatile memory IC featuring 2M words of mixed FLASH+SRAM with a max access time of 70 ns. It operates asynchronously at a nominal voltage of 1.8V, suitable for industrial applications. Its compact design (8x10 mm) ensures efficient space utilization in electronic devices.
M36W108T120ZN1T by STMicroelectronics

M36W108T120ZN1T

STMicroelectronics

STMicroelectronics M36W108T120ZN1T is a 1MX8 memory IC with 8388608 bit memory density. It operates in asynchronous mode, with CMOS technology and 2.7-3.6V supply voltage range. Suitable for commercial applications, it features a grid array package style and very thin profile for compact designs.
FM31256-GTR by Infineon Technologies

FM31256-GTR

Infineon Technologies

FM31256-GTR by Infineon Technologies is a 32KX8 MEMORY CIRCUIT IC with 262144 bit Memory Density. Operating at 3V, it has a SYNCHRONOUS mode and 550 ns Max Access Time. This SMALL OUTLINE IC is ideal for industrial applications requiring reliable memory storage solutions.
SN74AS870NT1 by Texas Instruments

SN74AS870NT1

Texas Instruments

SN74AS870NT1 by Texas Instruments is a TTL technology IC with 24 terminals in an IN-LINE package. It operates b/w 0°C to 70°C, suitable for commercial applications. The rectangular plastic/epoxy body makes it ideal for various other function memory circuits.
MT29C8G96MAZBADKD-5WT by Micron Technology

MT29C8G96MAZBADKD-5WT

Micron Technology

MT29C8G96MAZBADKD-5WT by Micron Technology is a 64MX32 memory IC with 67108864 words and 2147483648 bit memory density. Operating at 1.7-1.95V, it has a synchronous mode and thin profile grid array package shape. Ideal for applications requiring high-speed data processing in compact electronic devices.
MR0A16AYS35R by Freescale Semiconductor

MR0A16AYS35R

Freescale Semiconductor

MR0A16AYS35R by Freescale Semiconductor is a 64KX16 memory circuit with a supply voltage of 3.3V. It operates in asynchronous mode and has a max access time of 35ns. This memory IC is commonly used in applications requiring high-speed data storage and retrieval.