Integral Memory - IN3T1GEZNIX

IN3T1GEZNIX by Integral Memory

Image shown is a representation only.

Manufacturer	Integral Memory
Manufacturer's Part Number	IN3T1GEZNIX
Description	Integral; Product Model: IN3T1GEZNIX; Product Type: RAM Module; Memory Size: 1 GB; Memory Technology: DDR3 SDRAM; Error Checking: ECC;

IN3T1GEZNIX Technical Details

NAME	DESCRIPTION
Brand Name:	Integral
Form Factor:	DIMM
Memory Technology:	DDR3 SDRAM
Memory Size:	1 GB
Product Type:	RAM Module
Product Name:	IN3T1GEZNIX 1GB DDR3 SDRAM Memory Module
Number of Pins:	240-pin
Product Model:	IN3T1GEZNIX
Memory Speed:	1333 MHz
Error Checking:	ECC
Signal Processing:	Unbuffered
Memory Standard:	DDR3-1333/PC3-10600

Popular Products

BSS138

Panjit International

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: 3 ohm; Minimum DS Breakdown Voltage: 50 V; Terminal Form: GULL WING;

LL4148

Rectron

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

SMBJ18CA

Uniohm

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

BAV99

Frontier Electronics

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

SMBJ18CA

Vishay Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: J BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

BSS84PH6327XTSA2

Infineon Technologies

BSS84PH6327XTSA2 by Infineon is a P-CHANNEL FET with 60V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and operates in enhancement mode. With a max drain current of 0.17A and on-resistance of 8 ohm, it offers reliable performance in small outline packages.

2N7002

North American Philips Discrete Products Div

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (ID): .115 A;

BAV99

Vishay Telefunken

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

NC7WZ07P6X

Onsemi

The Onsemi NC7WZ07P6X is a logic gate with 2 functions, featuring a propagation delay of 4.8 ns at 1.8V supply voltage. With open-drain output characteristics, it operates in industrial temperatures from -40 to 85°C. Ideal for applications requiring fast signal processing and low power consumption in compact designs.

2N7002,215

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;