International Rectifier - IRF7103TR

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IRF7103TR by International Rectifier

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Manufacturer International Rectifier
Manufacturer's Part Number IRF7103TR
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel;
Datasheet IRF7103TR Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 3 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN LEAD
JESD-609 Code: e0
No. of Terminals: 8
Minimum DS Breakdown Voltage: 50 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: LOGIC LEVEL COMPATIBLE
Maximum Operating Temperature: 150 Cel
Maximum Power Dissipation Ambient: 2 W
Maximum Drain-Source On Resistance: .13 ohm
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