International Rectifier - IRF7341QTR

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IRF7341QTR by International Rectifier

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Manufacturer International Rectifier
Manufacturer's Part Number IRF7341QTR
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.7 W; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (Abs) (ID): 5.1 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet IRF7341QTR Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 1.7 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Maximum Drain Current (ID): 5.1 A
Maximum Drain Current (Abs) (ID): 5.1 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN LEAD
JESD-609 Code: e0
Moisture Sensitivity Level (MSL): 1
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