IRFI4024H-117P by International Rectifier | Transistors

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Manufacturer	International Rectifier
Manufacturer's Part Number	IRFI4024H-117P
Description	N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 14 W; No. of Terminals: 5; No. of Elements: 2;
Datasheet	IRFI4024H-117P Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	AMPLIFIER
Maximum Drain Current (ID):	11 A
Maximum Pulsed Drain Current (IDM):	44 A
Sub-Category:	FET General Purpose Power
Surface Mount:	NO
Terminal Finish:	MATTE TIN OVER NICKEL
No. of Terminals:	5
Maximum Power Dissipation (Abs):	14 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T5
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Maximum Drain-Source On Resistance:	.06 ohm
Avalanche Energy Rating (EAS):	7.4 mJ
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum DS Breakdown Voltage:	55 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	11 A

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