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| Manufacturer | IXYS Corporation |
|---|---|
| Manufacturer's Part Number | IXTM10N100 |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Operating Temperature: 150 Cel; Transistor Application: SWITCHING; |
| Datasheet | IXTM10N100 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | METAL |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 10 A |
| Maximum Pulsed Drain Current (IDM): | 40 A |
| Sub-Category: | FET General Purpose Power |
| Surface Mount: | NO |
| No. of Terminals: | 2 |
| Maximum Power Dissipation (Abs): | 250 W |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | O-MBFM-P2 |
| No. of Elements: | 1 |
| Package Shape: | ROUND |
| Terminal Form: | PIN/PEG |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | DRAIN |
| Maximum Power Dissipation Ambient: | 300 W |
| Maximum Drain-Source On Resistance: | 1.2 ohm |
| JEDEC-95 Code: | TO-204AA |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum DS Breakdown Voltage: | 1000 V |
| Qualification: | Not Qualified |
| Maximum Drain Current (Abs) (ID): | 10 A |
