IXYS Corporation - VMM1500-0075P

  1. Home
  2. IXYS Corporation - VMM1500-0075P
VMM1500-0075P by IXYS Corporation

Image shown is a representation only.

Manufacturer IXYS Corporation
Manufacturer's Part Number VMM1500-0075P
Description N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS; Surface Mount: NO; Package Shape: RECTANGULAR; Transistor Element Material: SILICON; JESD-30 Code: R-XUFM-X7;
Datasheet VMM1500-0075P Datasheet
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 1500 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 7
Minimum DS Breakdown Voltage: 75 V
Qualification: Not Qualified
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X7
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Operating Mode: ENHANCEMENT MODE
Case Connection: ISOLATED
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .0008 ohm
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

IRFZ44NS by NXP Semiconductors

IRFZ44NS

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 110 W; Operating Mode: ENHANCEMENT MODE; Qualification: Not Qualified;
FQD12N20LTM-F085 by Onsemi

FQD12N20LTM-F085

Onsemi

FQD12N20LTM-F085 by Onsemi is a N-CHANNEL Power FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max Drain Current of 9A, Max Pulsed Drain Current of 36A, and Max Power Dissipation of 55W. This ENHANCEMENT MODE transistor operates b/w -55 to 150 °C and has a fast turn on/off time for efficient performance.
FDS8984 by Fairchild Semiconductor

FDS8984

Fairchild Semiconductor

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Avalanche Energy Rating (EAS): 32 mJ; Package Shape: RECTANGULAR;
FDV301N-NB9V008 by Fairchild Semiconductor

FDV301N-NB9V008

Fairchild Semiconductor

FDV301N-NB9V008 by Fairchild Semiconductor is a N-CHANNEL FET with 0.5A max drain current and 0.35W max power dissipation in enhancement mode. Ideal for surface mount applications, it operates at up to 150°C making it suitable for various power management circuits.
2N7002 by Sinyork

2N7002

Sinyork

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Operating Temperature: 85 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;
G3R350MT12J by Genesic Semiconductor

G3R350MT12J

Genesic Semiconductor

Power Field-Effect Transistors;
BSL302SNH6327XTSA1 by Infineon Technologies

BSL302SNH6327XTSA1

Infineon Technologies

Infineon Technologies' BSL302SNH6327XTSA1 is a N-CHANNEL Power FET with a min DS Breakdown Voltage of 30V. It has a max Pulsed Drain Current of 28A and an Avalanche Energy Rating of 30mJ. This FET is commonly used in applications requiring high power and efficient switching capabilities.
IRF640STRLPBF by International Rectifier

IRF640STRLPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 130 W; No. of Terminals: 2; Case Connection: DRAIN;
2N7002T by Philips Semiconductors

2N7002T

Philips Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; Maximum Drain Current (Abs) (ID): .3 A; No. of Elements: 1;
BSZ100N06LS3GATMA1 by Infineon Technologies

BSZ100N06LS3GATMA1

Infineon Technologies

BSZ100N06LS3GATMA1 by Infineon is a N-CHANNEL FET with 60V DS Breakdown Voltage, 80A IDM, and 0.0179 ohm RDS. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation. Package: PLASTIC/EPOXY, Surface Mountable, with DUAL terminals and DRAIN case connection.
IRF5305PBF by International Rectifier

IRF5305PBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 110 W; Additional Features: AVALANCHE RATED, HIGH RELIABILITY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IRLML0030TRPBF-1 by Infineon Technologies

IRLML0030TRPBF-1

Infineon Technologies

Infineon's IRLML0030TRPBF-1 is a N-channel Power FET with 30V DS breakdown voltage and 21A IDM. Ideal for applications requiring high power dissipation up to 1.3W, such as in small outline packages where space is limited. Operating in enhancement mode, it offers low 0.027 ohm drain-source resistance for efficient performance.
NX3008NBK,215 by NXP Semiconductors

NX3008NBK,215

NXP Semiconductors

NX3008NBK,215 by NXP Semiconductors is an N-CHANNEL FET with a max drain current of 0.4A and power dissipation of 0.42W. Ideal for applications requiring high efficiency in power management systems due to its single configuration and enhancement mode operation at up to 150°C operating temperature.
IRF740APBF by Vishay Intertechnology

IRF740APBF

Vishay Intertechnology

Vishay Intertechnology's IRF740APBF is a N-CHANNEL FET with 400V DS Breakdown Voltage, ideal for SWITCHING applications. It features 40A Max Pulsed Drain Current and 630mJ Avalanche Energy Rating. The transistor operates in ENHANCEMENT MODE with a max power dissipation of 125W, making it suitable for high-power electronic circuits.
JANTX2N6796 by Semicoa

JANTX2N6796

Semicoa

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Reference Standard: MIL-19500; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 100 V;
JANTX2N6796 by Intersil

JANTX2N6796

Intersil

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; Terminal Position: BOTTOM; Maximum Drain Current (Abs) (ID): 8 A;
SQJ431AEP-T1_GE3 by Vishay Intertechnology

SQJ431AEP-T1_GE3

Vishay Intertechnology

Vishay Intertechnology's SQJ431AEP-T1_GE3 is a P-CHANNEL FET with 200V DS Breakdown Voltage, 37A IDM, and 0.315 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
IRFL9014PBF by Vishay Intertechnology

IRFL9014PBF

Vishay Intertechnology

Vishay Intertechnology's IRFL9014PBF is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 14A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package. Operating from -55 to 150 °C, it has 0.5 ohm Drain-Source On Resistance and 3.1W Max Power Dissipation.
IRF540NLPBF by Infineon Technologies

IRF540NLPBF

Infineon Technologies

Infineon's IRF540NLPBF is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 110A IDM, 185mJ EAS, and 0.044 ohm RDS(on). With a max power dissipation of 130W and operating temperature of 175°C, it offers reliable performance in various electronic systems.
2N7002 by Sipex

2N7002

Sipex

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Peak Reflow Temperature (C): 240; Terminal Finish: TIN LEAD;