Keysight Technologies - HSCH-9161

  1. Home
  2. Keysight Technologies - HSCH-9161
HSCH-9161 by Keysight Technologies

Image shown is a representation only.

Manufacturer Keysight Technologies
Manufacturer's Part Number HSCH-9161
Description MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: SQUARE;
Datasheet HSCH-9161 Datasheet
In Stock31
NAME DESCRIPTION
Package Body Material: CERAMIC, METAL-SEALED COFIRED
Config: SINGLE
Diode Type: MIXER DIODE
Frequency Band: MILLIMETER WAVE BAND
Surface Mount: YES
Terminal Finish: TIN LEAD
JESD-609 Code: e0
Minimum Operating Temperature: -65 Cel
Diode Element Material: GALLIUM ARSENIDE
No. of Terminals: 2
Terminal Position: DUAL
Package Style (Meter): MICROWAVE
Schottky Barrier Type: ZERO BARRIER
JESD-30 Code: S-CDMW-F2
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: FLAT
Maximum Operating Temperature: 150 Cel
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
31 - -

Popular Products

Category Top Products

MMBD701LT3G by Onsemi

MMBD701LT3G

Onsemi

MMBD701LT3G by Onsemi is a single Schottky mixer diode with ultra high frequency band, suitable for microwave applications. It features a max diode capacitance of 1 pF and can operate at temperatures up to 125 °C. This surface mount diode has a small outline package style and gull wing terminal form, making it ideal for compact electronic designs.
HSMS-2815-TR1G by Agilent Technologies

HSMS-2815-TR1G

Agilent Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;
1N6263-AR1 by STMicroelectronics

1N6263-AR1

STMicroelectronics

1N6263-AR1 by STMicroelectronics is a Schottky mixer diode with 2.2 pF capacitance, operating from -65 °C to 200°C. Ideal for VHF to UHF applications due to its isolated axial package and silicon element material.
SBL-221 by Onsemi

SBL-221

Onsemi

Onsemi's SBL-221 is a surface mount mixer diode with GaAs element. Operating freq range 20-40 GHz, temp up to 150 °C. Ideal for microwave applications requiring high frequency mixing and detection.
DB2730900L by ROHM

DB2730900L

ROHM

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BAT24-02ELS by Infineon Technologies

BAT24-02ELS

Infineon Technologies

MIXER DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
DB3X313N0L by Panasonic

DB3X313N0L

Panasonic

The Panasonic DB3X313N0L is a Schottky mixer diode with 2 elements, common cathode config, and ultra high frequency band. It operates b/w -40 to 85°C, has max VF of 0.55V, and max output current of 0.13A. Ideal for microwave applications due to its small outline package style and dual terminal position.
BAT15-04R by Infineon Technologies

BAT15-04R

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BAR11 by STMicroelectronics

BAR11

STMicroelectronics

BAR11 by STMicroelectronics is a single mixer diode with a Schottky technology, operating in the very high frequency to ultra high frequency band. It has a max forward voltage of 1V and max output current of 0.02A, making it suitable for applications requiring microwave mixing and detection at temperatures ranging from -65 °C to 200°C.
HSMS-2812-TR1 by Broadcom

HSMS-2812-TR1

Broadcom

HSMS-2812-TR1 by Broadcom is a microwave mixer and detector diode with a Schottky technology. It has a max forward voltage of 0.41V and can operate at temperatures up to 150°C. This diode, with its small outline package style, is commonly used in applications requiring high-frequency mixing and detection.
BA891T/R by NXP Semiconductors

BA891T/R

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1PS79SB17,115 by Nexperia

1PS79SB17,115

Nexperia

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MMBD353 by Onsemi

MMBD353

Onsemi

The Onsemi MMBD353 is a Schottky mixer diode with 1 pF capacitance, suitable for ultra high frequency applications. It comes in a small outline package with gull wing terminals and is surface mountable. This diode has two elements made of silicon, making it ideal for microwave mixing and detecting purposes.
BAT15-113S by Infineon Technologies

BAT15-113S

Infineon Technologies

MIXER DIODE; Surface Mount: YES; Maximum Noise Figure: 7.5 dB; Diode Element Material: SILICON; Maximum Operating Temperature: 150 Cel;
5082-2835#T25 by Broadcom

5082-2835#T25

Broadcom

Broadcom's 5082-2835#T25 is a Schottky mixer diode with 1 pF capacitance, ideal for ultra high frequency applications. It features a glass package, single configuration, and tin lead terminal finish. The diode element material is silicon, with an isolated case connection and round package shape.
BAT1502ELSE6327XTSA1 by Infineon Technologies

BAT1502ELSE6327XTSA1

Infineon Technologies

BAT1502ELSE6327XTSA1 by Infineon Technologies is a single-config microwave mixer diode for X Band applications. With a max diode capacitance of 0.23 pF, it operates in temperatures ranging from -55 to 150 °C. Utilizing Schottky technology with low barrier type, it has a max forward voltage of 0.41 V and output current of 0.11 A.
SNSR201MXT5G by Onsemi

SNSR201MXT5G

Onsemi

SNSR201MXT5G by Onsemi is a single microwave mixer diode with Schottky technology. It operates in C band to Ku band frequencies, with max forward voltage of 0.32V and output current of 0.05A. Ideal for applications requiring high frequency mixing and detection in compact chip carrier packages.
BAT63-07W-H6327 by Infineon Technologies

BAT63-07W-H6327

Infineon Technologies

MIXER DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Minimum Operating Temperature: -55 Cel; Reverse Test Voltage: 3 V; Maximum Power Dissipation: .1 W;
BAT15-103ES by Infineon Technologies

BAT15-103ES

Infineon Technologies

MIXER DIODE; Terminal Position: END; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
BAT1705E6327HTSA1 by Infineon Technologies

BAT1705E6327HTSA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;