L-3 Narda-miteq - AFSX3-00100200-15-10P

  1. Home
  2. L-3 Narda-miteq - AFSX3-00100200-15-10P
AFSX3-00100200-15-10P by L-3 Narda-miteq

Image shown is a representation only.

Manufacturer L-3 Narda-miteq
Manufacturer's Part Number AFSX3-00100200-15-10P
Description WIDE BAND LOW POWER; Additional Features: LOW NOISE; Maximum Voltage Standing Wave Ratio: 2; Maximum Operating Frequency: 2000 MHz; Construction: COAXIAL; Gain: 36 dB;
Datasheet AFSX3-00100200-15-10P Datasheet
NAME DESCRIPTION
Other Names: 1949-AFSX3-00100200-15-10P
Maximum Voltage Standing Wave Ratio: 2
Construction: COAXIAL
Minimum Operating Frequency: 100 MHz
Additional Features: LOW NOISE
Maximum Operating Frequency: 2000 MHz
RF or Microwave Device Type: WIDE BAND LOW POWER
Gain: 36 dB
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

XB1007-QT-0G00 by Mimix Broadband

XB1007-QT-0G00

Mimix Broadband

WIDE BAND MEDIUM POWER; Minimum Operating Frequency: 4000 MHz; Gain: 23 dB; Maximum Operating Frequency: 11000 MHz; Construction: COMPONENT; Maximum Input Power (CW): 20 dBm;
HMC960LP4ETR by Analog Devices

HMC960LP4ETR

Analog Devices

Analog Devices' HMC960LP4ETR is a wide band high power RF amplifier with 0 dB gain, operating from 0 to 100 MHz. It has 24 terminals, matte tin finish, and operates b/w -40°C to +85°C. Ideal for applications requiring surface mount components in RF and microwave systems.
RF6886SR by Qorvo

RF6886SR

Qorvo

Qorvo's RF6886SR is a wide band high power amplifier with 31 dB gain, operating from 433 MHz to 470 MHz. It has a max input power of 12 dBm and VSWR of 5, suitable for RF & microwave applications requiring high power amplification in plastic/epoxy package.
HMC8411LP2FETR by Analog Devices

HMC8411LP2FETR

Analog Devices

Analog Devices' HMC8411LP2FETR is a wide band low power RF amplifier with 11 dB gain and 20 dBm max input power. Operating from -40 to 85°C, it covers frequencies from 10 MHz to 10 GHz. Ideal for RF and microwave applications requiring high performance in a compact form factor.
CMPA801B025F by Wolfspeed

CMPA801B025F

Wolfspeed

RF/Microwave Amplifiers;
ADL8121ACPZN by Analog Devices

ADL8121ACPZN

Analog Devices

ADL8121ACPZN by Analog Devices is a PHEMT RF amplifier with 15dB gain, 32dBm CW input power, and 1.43 VSWR. Ideal for wideband low-power applications in the RF & microwave field, it operates from -40°C to 85°C with a frequency range of 25MHz to 12GHz.
HMC478MP86ETR by Hittite Microwave

HMC478MP86ETR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: SL,4GW-LD,.085CIR;
MMG15241HT1 by Freescale Semiconductor

MMG15241HT1

Freescale Semiconductor

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Characteristic Impedance: 50 ohm; Maximum Supply Current: 105 mA;
SGA3463Z by Qorvo

SGA3463Z

Qorvo

SGA3463Z by Qorvo is a wide band low power RF amplifier with a gain of 20 dB. It operates at frequencies ranging from 0 MHz to 5000 MHz and can handle a max input power of 18 dBm. This component, made of plastic/epoxy, is suitable for surface mount applications in the RF and microwave field.
MAR-8ASM by Mini-circuits

MAR-8ASM

Mini-circuits

MAR-8ASM by Mini-circuits is a wide band low power RF amplifier with 20 dB gain, 50 ohm impedance, and 1.8 VSWR. Ideal for RF & microwave applications, it operates from -40 to 85°C, has a max input power of 13 dBm, and covers frequencies from DC to 1000 MHz.
HMC1114PM5E by Analog Devices

HMC1114PM5E

Analog Devices

Analog Devices' HMC1114PM5E is a GaN wide band high power RF amplifier with 31 dB gain, operating from 2.7 GHz to 3.8 GHz. It has a max input power of 18 dBm and VSWR of 6, suitable for applications requiring high-power amplification in the RF & microwave domain. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation.
TQP3M9035 by Triquint Semiconductor

TQP3M9035

Triquint Semiconductor

WIDE BAND MEDIUM POWER; Construction: COMPONENT; Maximum Input Power (CW): 23 dBm; Maximum Operating Temperature: 85 Cel; Characteristic Impedance: 50 ohm; Minimum Operating Frequency: 50 MHz;
AG302-86G by Qorvo

AG302-86G

Qorvo

The Qorvo AG302-86G is a GAAS technology RF amplifier with 13.3 dB gain, operating from 0 to 6000 MHz. It has a max input power of 10 dBm and operates on a 5V power supply. Ideal for wideband low-power applications, it features surface mounting and a characteristic impedance of 50 ohms.
HMC326MS8GE by Analog Devices

HMC326MS8GE

Analog Devices

HMC326MS8GE by Analog Devices is a wide band medium power RF amplifier with 18 dB gain and 50 ohm impedance. It operates b/w 3-4.5 GHz, handling up to 15 dBm CW input power. This component is ideal for applications requiring high frequency amplification in RF and microwave systems.
HMC694LP4ETR by Analog Devices

HMC694LP4ETR

Analog Devices

Analog Devices' HMC694LP4ETR is a GAAS technology RF amplifier with 24 terminals, operating from -40 to 85°C. It has a power supply of 5V and is designed for wideband low-power applications in RF & microwave systems. The package body material is plastic/epoxy with matte tin terminal finish, suitable for surface mounting.
MGA-31189-BLKG by Broadcom

MGA-31189-BLKG

Broadcom

Broadcom's MGA-31189-BLKG is a GAAS RF amplifier with 19dB gain, operating from 50MHz to 2000MHz. It has a max input power of 25dBm and requires a 5V power supply. Ideal for wideband medium-power applications, this component features surface mounting and a characteristic impedance of 50Ω.
MSA-0686-BLK by Agilent Technologies

MSA-0686-BLK

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Maximum Operating Frequency: 800 MHz;
MAX2659ELT/V+T by Maxim Integrated

MAX2659ELT/V+T

Maxim Integrated

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BICMOS; Screening Level: AEC-Q100;
HMC3653LP3BETR by Hittite Microwave

HMC3653LP3BETR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Power Supplies (V): 5;
HMC414MS8GE by Analog Devices

HMC414MS8GE

Analog Devices

Analog Devices' HMC414MS8GE is a narrow band medium power RF amplifier with 17 dB gain, operating from 2200 to 2800 MHz. It can handle up to 17 dBm CW input power and has a characteristic impedance of 50 ohms. Ideal for RF applications requiring high performance in temperatures ranging from -40°C to 85°C.