Leshan Radio - L2N7002DW1T1G

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L2N7002DW1T1G by Leshan Radio

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Manufacturer Leshan Radio
Manufacturer's Part Number L2N7002DW1T1G
Description N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .38 W; Terminal Form: GULL WING; Maximum Drain Current (Abs) (ID): .115 A;
Datasheet L2N7002DW1T1G Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Feedback Capacitance (Crss): 5 pF
Maximum Drain Current (ID): .115 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 6
Minimum DS Breakdown Voltage: 60 V
Maximum Power Dissipation (Abs): .38 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): .115 A
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: 7.5 ohm
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