Leshan Radio - LBSS84DW1T1G

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LBSS84DW1T1G by Leshan Radio

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Manufacturer Leshan Radio
Manufacturer's Part Number LBSS84DW1T1G
Description P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .38 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): .13 A; Maximum Operating Temperature: 150 Cel;
Datasheet LBSS84DW1T1G Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): .38 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): .13 A
Maximum Drain Current (Abs) (ID): .13 A
Sub-Category: Other Transistors
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
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