Littelfuse - FII30-06D

FII30-06D by Littelfuse

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Manufacturer Littelfuse
Manufacturer's Part Number FII30-06D
Description N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 30 A; Maximum VCEsat: 2.4 V;
Datasheet FII30-06D Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 30 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: NO
Terminal Finish: TIN SILVER COPPER
Nominal Turn Off Time (toff): 330 ns
No. of Terminals: 5
Maximum Power Dissipation (Abs): 100 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 105 ns
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T5
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e1
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 600 V
Additional Features: HIGH RELIABILITY
Maximum Gate-Emitter Voltage: 20 V
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum VCEsat: 2.4 V
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