Image shown is a representation only.
| Manufacturer | Littelfuse |
|---|---|
| Manufacturer's Part Number | GWM120-0075X1-BL |
| Description | N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Package Shape: RECTANGULAR; Maximum Drain Current (Abs) (ID): 110 A; No. of Terminals: 17; |
| Datasheet | GWM120-0075X1-BL Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 110 A |
| Sub-Category: | FET General Purpose Power |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | NO |
| No. of Terminals: | 17 |
| Minimum DS Breakdown Voltage: | 75 V |
| Qualification: | Not Qualified |
| Terminal Position: | DUAL |
| Package Style (Meter): | IN-LINE |
| JESD-30 Code: | R-PDIP-T17 |
| No. of Elements: | 6 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Maximum Drain Current (Abs) (ID): | 110 A |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
| Maximum Drain-Source On Resistance: | .0049 ohm |
