
Image shown is a representation only.
Manufacturer | Littelfuse |
---|---|
Manufacturer's Part Number | IXFD52N60Q2-94 |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Peak Reflow Temperature (C): NOT SPECIFIED; Transistor Element Material: SILICON; Qualification: Not Qualified; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; |
Datasheet | IXFD52N60Q2-94 Datasheet |
NAME | DESCRIPTION |
---|---|
Minimum DS Breakdown Voltage: | 600 V |
Qualification: | Not Qualified |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
No. of Elements: | 1 |
Operating Mode: | ENHANCEMENT MODE |
Peak Reflow Temperature (C): | NOT SPECIFIED |
Polarity or Channel Type: | N-CHANNEL |
Maximum Drain-Source On Resistance: | .13 ohm |