Littelfuse - IXFM75N10

IXFM75N10 by Littelfuse

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Manufacturer Littelfuse
Manufacturer's Part Number IXFM75N10
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 300 W; Operating Mode: ENHANCEMENT MODE; Case Connection: DRAIN;
Datasheet IXFM75N10 Datasheet
NAME DESCRIPTION
Package Body Material: METAL
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 75 A
Maximum Pulsed Drain Current (IDM): 300 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
No. of Terminals: 2
Maximum Power Dissipation (Abs): 300 W
Terminal Position: BOTTOM
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: O-MBFM-P2
No. of Elements: 1
Package Shape: ROUND
Terminal Form: PIN/PEG
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Power Dissipation Ambient: 300 W
Maximum Drain-Source On Resistance: .02 ohm
JEDEC-95 Code: TO-204
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 100 V
Qualification: Not Qualified
Additional Features: AVALANCHE RATED
Maximum Drain Current (Abs) (ID): 75 A
Peak Reflow Temperature (C): NOT SPECIFIED
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