Littelfuse - IXFN110N60P3

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IXFN110N60P3 by Littelfuse

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Manufacturer Littelfuse
Manufacturer's Part Number IXFN110N60P3
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1500 W; Terminal Position: UPPER; Package Body Material: PLASTIC/EPOXY;
Datasheet IXFN110N60P3 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 90 A
Maximum Pulsed Drain Current (IDM): 275 A
Surface Mount: NO
No. of Terminals: 4
Maximum Power Dissipation (Abs): 1500 W
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PUFM-X4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: .056 ohm
Avalanche Energy Rating (EAS): 3000 mJ
Maximum Feedback Capacitance (Crss): 8 pF
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 600 V
Additional Features: AVALANCHE RATED
Reference Standard: UL RECOGNIZED
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