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| Manufacturer | Littelfuse |
|---|---|
| Manufacturer's Part Number | IXFN26N120P |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 695 W; Transistor Application: SWITCHING; Reference Standard: UL RECOGNIZED; |
| Datasheet | IXFN26N120P Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 23 A |
| Maximum Pulsed Drain Current (IDM): | 60 A |
| Sub-Category: | FET General Purpose Power |
| Surface Mount: | NO |
| Terminal Finish: | NICKEL |
| No. of Terminals: | 4 |
| Maximum Power Dissipation (Abs): | 695 W |
| Terminal Position: | UPPER |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-PUFM-X4 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | UNSPECIFIED |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | ISOLATED |
| Maximum Drain-Source On Resistance: | .46 ohm |
| Avalanche Energy Rating (EAS): | 1500 mJ |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum DS Breakdown Voltage: | 1200 V |
| Qualification: | Not Qualified |
| Additional Features: | AVALANCHE RATED |
| Reference Standard: | UL RECOGNIZED |
| Maximum Drain Current (Abs) (ID): | 23 A |
