Littelfuse - IXFN32N100Q3

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IXFN32N100Q3 by Littelfuse

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Manufacturer Littelfuse
Manufacturer's Part Number IXFN32N100Q3
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 780 W; Operating Mode: ENHANCEMENT MODE; Terminal Form: UNSPECIFIED;
Datasheet IXFN32N100Q3 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 28 A
Maximum Pulsed Drain Current (IDM): 96 A
Surface Mount: NO
No. of Terminals: 4
Maximum Power Dissipation (Abs): 780 W
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PUFM-X4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: .32 ohm
Avalanche Energy Rating (EAS): 2000 mJ
Maximum Feedback Capacitance (Crss): 67 pF
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 1000 V
Reference Standard: UL RECOGNIZED
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