Littelfuse - IXFN70N120SK

  1. Home
  2. Littelfuse - IXFN70N120SK
IXFN70N120SK by Littelfuse

Image shown is a representation only.

Manufacturer Littelfuse
Manufacturer's Part Number IXFN70N120SK
Description Power Field-Effect Transistors; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 150 Cel;
Datasheet IXFN70N120SK Datasheet
NAME DESCRIPTION
Maximum Operating Temperature: 150 Cel
Minimum Operating Temperature: -40 Cel
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

IRFZ44NLPBF by International Rectifier

IRFZ44NLPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 94 W; Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier; No. of Terminals: 3;
FDS6982AS by Fairchild Semiconductor

FDS6982AS

Fairchild Semiconductor

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain-Source On Resistance: .0135 ohm; Package Style (Meter): SMALL OUTLINE;
FDD8424H by Fairchild Semiconductor

FDD8424H

Fairchild Semiconductor

N-CHANNEL AND P-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; Peak Reflow Temperature (C): 260; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
FDD86102LZ by Fairchild Semiconductor

FDD86102LZ

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 54 W; JESD-30 Code: R-PSSO-G2; Maximum Drain Current (ID): 8 A;
AUIRF7759L2TR1 by International Rectifier

AUIRF7759L2TR1

International Rectifier

AUIRF7759L2TR1 by International Rectifier is a N-CHANNEL Power FET with 375A ID and 125W power dissipation. Ideal for high-power applications, it operates at up to 175°C. Suitable for surface mount configurations, this METAL-OXIDE SEMICONDUCTOR transistor offers robust performance in demanding environments.
IRFL9014PBF by International Rectifier

IRFL9014PBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.1 W; Case Connection: DRAIN; Package Style (Meter): SMALL OUTLINE;
2N7000 by Sipex

2N7000

Sipex

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .4 W; No. of Elements: 1; Terminal Finish: Tin/Lead (Sn/Pb);
IPD50P04P4L11ATMA2 by Infineon Technologies

IPD50P04P4L11ATMA2

Infineon Technologies

Infineon's IPD50P04P4L11ATMA2 is a P-CHANNEL FET with 40V DS Breakdown Voltage, 200A IDM, and 0.0106 ohm RDS(on). Ideal for power applications in automotive electronics due to AEC-Q101 standard compliance and 58W power dissipation.
FDS9926A by Onsemi

FDS9926A

Onsemi

FDS9926A by Onsemi is an N-CHANNEL Power FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max Drain Current of 6.5A, 0.03 ohm Drain-Source On Resistance, and operates in ENHANCEMENT MODE. This small outline transistor has a Max Power Dissipation of 1.6W and can handle up to 20A Pulsed Drain Current.
RJK0651DPB-00-J5 by Renesas Electronics

RJK0651DPB-00-J5

Renesas Electronics

Renesas Electronics RJK0651DPB-00-J5 is a N-CHANNEL FET with 60V DS Breakdown Voltage, 100A IDM, and 0.018 ohm RDS. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 150°C, making it suitable for high-power tasks.
BSC028N06NSTATMA1 by Infineon Technologies

BSC028N06NSTATMA1

Infineon Technologies

BSC028N06NSTATMA1 by Infineon is a N-CHANNEL FET with 60V DS breakdown voltage, 0.0028 ohm max RDS(on), and 400A IDM. It's used for switching applications due to its built-in diode, small outline package style, and high pulsed drain current capacity.
G2R1000MT17D by Genesic Semiconductor

G2R1000MT17D

Genesic Semiconductor

Power Field-Effect Transistors;
IRLML2030TRPBF by International Rectifier

IRLML2030TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Peak Reflow Temperature (C): 260; Transistor Element Material: SILICON;
FDS4559-F085 by Onsemi

FDS4559-F085

Onsemi

FDS4559-F085 by Onsemi is a N-CHANNEL Power FET for switching applications. It features 60V DS breakdown voltage, 4.5A max drain current, and 0.055 ohm max on resistance. With a small outline package style and gull wing terminals, it operates in enhancement mode at up to 150°C peak temperature.
FDV301N-NB9V008 by Fairchild Semiconductor

FDV301N-NB9V008

Fairchild Semiconductor

FDV301N-NB9V008 by Fairchild Semiconductor is a N-CHANNEL FET with 0.5A max drain current and 0.35W max power dissipation in enhancement mode. Ideal for surface mount applications, it operates at up to 150°C making it suitable for various power management circuits.
IXTA96P085T by IXYS Corporation

IXTA96P085T

IXYS Corporation

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 298 W; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel;
FQD16N25CTM by Onsemi

FQD16N25CTM

Onsemi

FQD16N25CTM by Onsemi is a power field effect transistor (FET) with a min DS breakdown voltage of 250V. It is an N-channel transistor with a max drain current of 16A and a max power dissipation of 160W. This transistor is commonly used for switching applications.
SPW20N60C3FKSA1 by Infineon Technologies

SPW20N60C3FKSA1

Infineon Technologies

SPW20N60C3FKSA1 by Infineon is a N-CHANNEL FET with 600V DS Breakdown Voltage, 62.1A IDM, and 0.19 ohm RDS(on). It is used in power applications due to its 690mJ EAS rating, operating at up to 150°C.
STY60NK30Z by STMicroelectronics

STY60NK30Z

STMicroelectronics

STY60NK30Z by STMicroelectronics is a N-CHANNEL FET with 300V DS Breakdown Voltage, ideal for SWITCHING applications. It features 240A IDM and 0.045 ohm RDS(on), operating in ENHANCEMENT MODE at up to 150°C. The transistor comes in a RECTANGULAR package with Matte Tin finish, offering high power dissipation of 450W.
IRF7401TRPBF by Infineon Technologies

IRF7401TRPBF

Infineon Technologies

Infineon's IRF7401TRPBF is an N-channel FET with a 20V breakdown voltage and 8.7A max drain current. Ideal for switching applications, it features a built-in diode, 0.022 ohm on-resistance, and can handle up to 35A pulsed drain current in enhancement mode operation.