Littelfuse - IXFT12N100QHV

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IXFT12N100QHV by Littelfuse

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Manufacturer Littelfuse
Manufacturer's Part Number IXFT12N100QHV
Description Power Field-Effect Transistors;
Datasheet IXFT12N100QHV Datasheet
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IRFR3710ZTRPBF by International Rectifier

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IRF640 by Motorola

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IRLR2908TRPBF by International Rectifier

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IRFHS9301TRPBF by Infineon Technologies

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IRF540NLPBF by Infineon Technologies

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FDB3632 by Fairchild Semiconductor

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IRFHS9301TRPBF by International Rectifier

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P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Qualification: Not Qualified; Package Shape: SQUARE; Operating Mode: ENHANCEMENT MODE;
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N-CHANNEL AND P-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 35 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): 260;
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N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Reference Standard: MIL-19500; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 100 V;
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