Littelfuse - IXGQ200N60Y3

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IXGQ200N60Y3 by Littelfuse

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Manufacturer Littelfuse
Manufacturer's Part Number IXGQ200N60Y3
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 800 W; Maximum Collector Current (IC): 200 A; No. of Elements: 1; Maximum VCEsat: 4 V; Maximum Collector-Emitter Voltage: 600 V;
Datasheet IXGQ200N60Y3 Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 200 A
Maximum Power Dissipation (Abs): 800 W
Maximum Collector-Emitter Voltage: 600 V
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 4 V
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