IXGQ50N60Y4 by Littelfuse | Transistors

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Manufacturer	Littelfuse
Manufacturer's Part Number	IXGQ50N60Y4
Description	Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 300 W; Maximum Collector Current (IC): 50 A; No. of Elements: 1; Maximum Operating Temperature: 150 Cel; Maximum Gate-Emitter Voltage: 20 V;
Datasheet	IXGQ50N60Y4 Datasheet

NAME	DESCRIPTION
Maximum Collector Current (IC):	50 A
Maximum Power Dissipation (Abs):	300 W
Maximum Collector-Emitter Voltage:	600 V
No. of Elements:	1
Maximum Operating Temperature:	150 Cel
Maximum Gate-Emitter Voltage:	20 V
Sub-Category:	Insulated Gate BIP Transistors
Maximum VCEsat:	4 V

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