Littelfuse - IXGQ50N90Y4

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IXGQ50N90Y4 by Littelfuse

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Manufacturer Littelfuse
Manufacturer's Part Number IXGQ50N90Y4
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 50 A; Maximum Gate-Emitter Voltage: 20 V; Maximum VCEsat: 4.5 V; Maximum Collector-Emitter Voltage: 900 V;
Datasheet IXGQ50N90Y4 Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 50 A
Maximum Power Dissipation (Abs): 250 W
Maximum Collector-Emitter Voltage: 900 V
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 4.5 V
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