Littelfuse - IXTD100N25P-8S

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IXTD100N25P-8S by Littelfuse

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Manufacturer Littelfuse
Manufacturer's Part Number IXTD100N25P-8S
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; No. of Elements: 1; Transistor Application: SWITCHING; Qualification: Not Qualified; Maximum Drain-Source On Resistance: .034 ohm;
Datasheet IXTD100N25P-8S Datasheet
NAME DESCRIPTION
Minimum DS Breakdown Voltage: 250 V
Qualification: Not Qualified
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: N-CHANNEL
Maximum Drain-Source On Resistance: .034 ohm
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