Littelfuse - IXTD11P50-7B

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IXTD11P50-7B by Littelfuse

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Manufacturer Littelfuse
Manufacturer's Part Number IXTD11P50-7B
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Minimum DS Breakdown Voltage: 500 V; Transistor Element Material: SILICON; Maximum Drain-Source On Resistance: .75 ohm; Operating Mode: ENHANCEMENT MODE;
Datasheet IXTD11P50-7B Datasheet
NAME DESCRIPTION
Minimum DS Breakdown Voltage: 500 V
Qualification: Not Qualified
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: P-CHANNEL
Maximum Drain-Source On Resistance: .75 ohm
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