Littelfuse - IXTH52N65X

  1. Home
  2. Littelfuse - IXTH52N65X
IXTH52N65X by Littelfuse

Image shown is a representation only.

Manufacturer Littelfuse
Manufacturer's Part Number IXTH52N65X
Description Power Field-Effect Transistors;
Datasheet IXTH52N65X Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

SI7463ADP-T1-GE3 by Vishay Intertechnology

SI7463ADP-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SI7463ADP-T1-GE3 is a P-CHANNEL FET with 40V DS Breakdown Voltage and 70A IDM. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE and operates in ENHANCEMENT MODE.
FDD8424H by Onsemi

FDD8424H

Onsemi

FDD8424H by Onsemi is a Power FET with N-CHANNEL and P-CHANNEL configurations. It has a 40V DS breakdown voltage, 55A max pulsed drain current, and 0.024 ohm max drain-source resistance. Ideal for switching applications, this MOSFET operates in enhancement mode with a max temperature of 150°C.
G3R450MT17D by Genesic Semiconductor

G3R450MT17D

Genesic Semiconductor

Power Field-Effect Transistors;
IRLL024NTRPBF by International Rectifier

IRLL024NTRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Terminal Position: DUAL; Case Connection: DRAIN;
IRFP4568PBF by Infineon Technologies

IRFP4568PBF

Infineon Technologies

Infineon's IRFP4568PBF is a N-CHANNEL Power FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring 684A IDM and 0.0059 ohm RDS(on), it operates in ENHANCEMENT MODE up to 175°C. The PLASTIC/EPOXY package with THROUGH-HOLE terminals ensures reliable performance in high-power circuits.
IRFB4115PBF by Infineon Technologies

IRFB4115PBF

Infineon Technologies

IRFB4115PBF by Infineon is a N-CHANNEL Power FET with 150V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 420A and EAS of 830mJ, making it suitable for high-power operations. With an operating temperature up to 175°C and 0.011 ohm RDS(on), this transistor offers reliable performance in various industrial settings.
SQ2389ES-T1_GE3 by Vishay Intertechnology

SQ2389ES-T1_GE3

Vishay Intertechnology

Power Field-Effect Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
SUM90P10-19L-E3 by Vishay Intertechnology

SUM90P10-19L-E3

Vishay Intertechnology

Vishay Intertechnology's SUM90P10-19L-E3 is a P-channel power FET with 100V DS breakdown voltage and 90A IDM. Ideal for switching applications, it features a single configuration with built-in diode and operates in enhancement mode. With a max power dissipation of 375W, this MOSFET has a drain-source on resistance of 0.019 ohm and can withstand temperatures from -55 to 175°C.
DMG2305UX-7 by Diodes Incorporated

DMG2305UX-7

Diodes Incorporated

DMG2305UX-7 by Diodes Inc. is a P-channel FET with 20V DS breakdown voltage, 4.2A max drain current, and 0.052 ohm RDS(on). Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and 150°C operating temp. Features include single configuration with built-in diode, Gull Wing terminals, and small outline package style.
SPP08N80C3 by Infineon Technologies

SPP08N80C3

Infineon Technologies

SPP08N80C3 by Infineon Technologies is a power FET with a min DS breakdown voltage of 800V. It has a max pulsed drain current of 24A and an avalanche energy rating of 340mJ. This N-channel transistor is commonly used in applications requiring high power dissipation and temperature resistance.
NVMFS5113PLT1G by Onsemi

NVMFS5113PLT1G

Onsemi

NVMFS5113PLT1G by Onsemi is a P-CHANNEL power FET with a min DS breakdown voltage of 60V. It has a max pulsed drain current of 415A and an avalanche energy rating of 315mJ. This transistor is commonly used in automotive applications due to its AEC-Q101 reference standard and moisture sensitivity level of MSL1.
NDT2955 by National Semiconductor

NDT2955

National Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; JESD-609 Code: e0; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
IRFR024NTRPBF by Infineon Technologies

IRFR024NTRPBF

Infineon Technologies

IRFR024NTRPBF by Infineon is a N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features 68A IDM, 71mJ EAS, and 0.075ohm RDS(ON). With a max power dissipation of 45W and operating temperature of 175°C, it's suitable for high-power electronic systems.
BSP135H6327XTSA1 by Infineon Technologies

BSP135H6327XTSA1

Infineon Technologies

Infineon's BSP135H6327XTSA1 is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. Ideal for DEPLETION MODE operation, it has 0.48A IDM and 0.12A ID. Widely used in automotive applications due to AEC-Q101 standard compliance and 150°C max operating temp.
IRF640 by Vishay Intertechnology

IRF640

Vishay Intertechnology

Vishay Intertechnology's IRF640 is a N-CHANNEL Power FET with 200V DS Breakdown Voltage and 72A IDM. Ideal for SWITCHING applications, it has a max power dissipation of 125W and operates in ENHANCEMENT MODE. Suitable for various electronic devices requiring high current switching capabilities.
CSD18540Q5BT by Texas Instruments

CSD18540Q5BT

Texas Instruments

CSD18540Q5BT by Texas Instruments is a N-CHANNEL FET for SWITCHING applications. It has a 60V DS Breakdown Voltage, 400A IDM, and 0.0033 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, it can handle temperatures from -55 to 175 °C.
ATP304-TL-H by Onsemi

ATP304-TL-H

Onsemi

The Onsemi ATP304-TL-H is a P-CHANNEL Power FET with 60V DS Breakdown Voltage and 400A IDM. Ideal for applications requiring high power dissipation, it features a built-in diode, 0.0089 ohm RDS(on), and operates in enhancement mode. Suitable for surface mount designs with GULL WING terminals, this FET offers 656mJ EAS for robust performance in various electronic systems.
FDMC86102LZ by Onsemi

FDMC86102LZ

Onsemi

FDMC86102LZ by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 30A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.024 ohm RDS(on), and 41W Pdiss. Suitable for surface mount designs in various electronic systems requiring high power efficiency and reliability.
NDS7002A_NB9GGTXA by Fairchild Semiconductor

NDS7002A_NB9GGTXA

Fairchild Semiconductor

Fairchild Semiconductor's NDS7002A_NB9GGTXA is a single N-channel power FET for switching applications. It features a 60V DS breakdown voltage, 1.5A max pulsed drain current, and 2 ohm max drain-source resistance. With Gull Wing terminals and small outline package style, it operates in an enhancement mode with a temperature range of -65 to 150°C.
BS170 by Itt Components

BS170

Itt Components

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; JESD-609 Code: e0; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;