Littelfuse - IXTN30N100L

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IXTN30N100L by Littelfuse

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Manufacturer Littelfuse
Manufacturer's Part Number IXTN30N100L
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 800 W; Operating Mode: ENHANCEMENT MODE; Additional Features: AVALANCHE RATED;
Datasheet IXTN30N100L Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 30 A
Maximum Pulsed Drain Current (IDM): 70 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
Terminal Finish: NICKEL
No. of Terminals: 4
Maximum Power Dissipation (Abs): 800 W
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PUFM-X4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .45 ohm
Avalanche Energy Rating (EAS): 2000 mJ
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 1000 V
Qualification: Not Qualified
Additional Features: AVALANCHE RATED
Reference Standard: UL RECOGNIZED
Maximum Drain Current (Abs) (ID): 30 A
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