Littelfuse - IXTP1N100

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IXTP1N100 by Littelfuse

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Manufacturer Littelfuse
Manufacturer's Part Number IXTP1N100
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Transistor Element Material: SILICON; No. of Terminals: 3;
Datasheet IXTP1N100 Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 200 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 1.5 A
JEDEC-95 Code: TO-220AB
Maximum Pulsed Drain Current (IDM): 6 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
Minimum Operating Temperature: -55 Cel
No. of Terminals: 3
Minimum DS Breakdown Voltage: 1000 V
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: 11 ohm
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