Image shown is a representation only.
| Manufacturer | Littelfuse |
|---|---|
| Manufacturer's Part Number | IXTR210P10T |
| Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 390 W; Transistor Element Material: SILICON; Package Style (Meter): IN-LINE; |
| Datasheet | IXTR210P10T Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 10 |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 158 A |
| Maximum Pulsed Drain Current (IDM): | 800 A |
| Sub-Category: | Other Transistors |
| Surface Mount: | NO |
| Terminal Finish: | TIN SILVER COPPER |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | 390 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | IN-LINE |
| JESD-30 Code: | R-PSIP-T3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | ISOLATED |
| Maximum Drain-Source On Resistance: | .008 ohm |
| Avalanche Energy Rating (EAS): | 3000 mJ |
| Polarity or Channel Type: | P-CHANNEL |
| JESD-609 Code: | e1 |
| Minimum DS Breakdown Voltage: | 100 V |
| Additional Features: | AVALANCHE RATED |
| Reference Standard: | UL RECOGNIZED |
| Maximum Drain Current (Abs) (ID): | 158 A |
| Peak Reflow Temperature (C): | 260 |
