LGB8207ATH by Littelfuse | Transistors

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Manufacturer	Littelfuse
Manufacturer's Part Number	LGB8207ATH
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 165 W; Maximum Collector Current (IC): 20 A; Maximum Fall Time (tf): 15000 ns;
Datasheet	LGB8207ATH Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	20 A
Configuration:	SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR
Transistor Element Material:	SILICON
Maximum Rise Time (tr):	2000 ns
Transistor Application:	AUTOMOTIVE IGNITION
Maximum Turn On Time (ton):	2750 ns
Maximum Gate-Emitter Threshold Voltage:	2 V
Surface Mount:	YES
Nominal Turn Off Time (toff):	14700 ns
No. of Terminals:	2
Maximum Power Dissipation (Abs):	165 W
Terminal Position:	SINGLE
Nominal Turn On Time (ton):	2450 ns
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	21000 ns
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	175 Cel
Case Connection:	COLLECTOR
Maximum Fall Time (tf):	15000 ns
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Maximum Collector-Emitter Voltage:	365 V
Maximum Gate-Emitter Voltage:	15 V
Reference Standard:	AEC-Q101

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