Littelfuse - MIXA50PM650TMI

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MIXA50PM650TMI by Littelfuse

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Manufacturer Littelfuse
Manufacturer's Part Number MIXA50PM650TMI
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 188 W; Maximum Collector Current (IC): 75 A; Maximum VCEsat: 1.8 V; Maximum Gate-Emitter Voltage: 20 V; Maximum Collector-Emitter Voltage: 650 V;
Datasheet MIXA50PM650TMI Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 75 A
Maximum Power Dissipation (Abs): 188 W
Maximum Collector-Emitter Voltage: 650 V
No. of Elements: 1
Maximum Operating Temperature: 175 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 1.8 V
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