Littelfuse - MWI150-06

  1. Home
  2. Littelfuse - MWI150-06
MWI150-06 by Littelfuse

Image shown is a representation only.

Manufacturer Littelfuse
Manufacturer's Part Number MWI150-06
Description Insulated Gate Bipolar Transistors;
Datasheet MWI150-06 Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

APT85GR120JD60 by Microchip Technology

APT85GR120JD60

Microchip Technology

APT85GR120JD60 by Microchip Technology is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max power dissipation of 543W. Ideal for motor control applications, it has a nominal turn-off time of 445ns and operates in temperatures ranging from -55 to 150°C.
AIKW75N60CTXKSA1 by Infineon Technologies

AIKW75N60CTXKSA1

Infineon Technologies

AIKW75N60CTXKSA1 by Infineon Technologies is an N-Channel IGBT with a max VCEsat of 2V and a max IC of 80A. It is designed for power control applications, featuring a nominal toff of 365ns and ton of 69ns. The transistor operates at temperatures ranging from -40°C to 175°C, making it suitable for high-power industrial systems.
IRG4BC30FD1PBF by International Rectifier

IRG4BC30FD1PBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 31 A; Maximum Operating Temperature: 150 Cel;
IXGA20N120A3 by IXYS Corporation

IXGA20N120A3

IXYS Corporation

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 180 W; Maximum Collector Current (IC): 40 A; Package Style (Meter): SMALL OUTLINE;
FF450R12KT4F by Infineon Technologies

FF450R12KT4F

Infineon Technologies

Infineon's FF450R12KT4F is an N-Channel IGBT with VCEsat of 2.15V, IC of 580A, and Ptot of 2400W. Ideal for high-power applications requiring fast switching such as industrial motor drives and renewable energy systems due to its low turn-off time (720ns) and high collector-emitter voltage (1200V).
5SNA3600E170300 by Abb

5SNA3600E170300

Abb

Abb's 5SNA3600E170300 IGBT features N-CHANNEL polarity, 3600A IC, and 1700V VCE. Ideal for power control applications with a complex configuration and fast ton of 835ns.
FD1000R17IE4BOSA2 by Infineon Technologies

FD1000R17IE4BOSA2

Infineon Technologies

Infineon's FD1000R17IE4BOSA2 is an N-CHANNEL IGBT with 1700V max collector-emitter voltage and 1390A max collector current. Ideal for power control applications, it features a built-in diode, thermistor, and isolated case connection. With a turn on time of 720ns and turn off time of 1890ns, this rectangular package transistor operates at up to 175°C.
HGT1S10N120BNS by Harris Semiconductor

HGT1S10N120BNS

Harris Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 35 A; Transistor Application: MOTOR CONTROL; Package Style (Meter): SMALL OUTLINE;
MMIX4G20N250 by IXYS Corporation

MMIX4G20N250

IXYS Corporation

N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 23 A; No. of Elements: 4;
HGTG30N60C3D by Onsemi

HGTG30N60C3D

Onsemi

HGTG30N60C3D by Onsemi is an N-CHANNEL IGBT with 600V VCE, 63A IC, and 550ns toff. Ideal for MOTOR CONTROL applications due to its SINGLE configuration with BUILT-IN DIODE. Package style is FLANGE MOUNT with PLASTIC/EPOXY body material.
NGTB20N120IHRWG by Onsemi

NGTB20N120IHRWG

Onsemi

NGTB20N120IHRWG by Onsemi is an N-CHANNEL IGBT with 1200V VCE, 40A IC, and 384W Pd. It operates up to 175°C making it ideal for high-power applications like industrial motor drives and renewable energy systems.
IGW15T120FKSA1 by Infineon Technologies

IGW15T120FKSA1

Infineon Technologies

IGW15T120FKSA1 by Infineon Technologies is an N-CHANNEL IGBT transistor with a max collector-emitter voltage of 1200V and a max collector current of 30A. It has a nominal turn-off time of 720ns and nominal turn-on time of 85ns, making it ideal for power control applications. The package style is flange mount with through-hole terminals, suitable for high-power operations up to 150°C.
IKW75N60TFKSA1 by Infineon Technologies

IKW75N60TFKSA1

Infineon Technologies

IKW75N60TFKSA1 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 80A max collector current. It has a single configuration with built-in diode, ideal for power control applications. The transistor features a nominal turn-off time of 401ns and nominal turn-on time of 69ns, suitable for high-power operations up to 150°C.
IRG4PC50SPBF by International Rectifier

IRG4PC50SPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 70 A; Maximum Collector-Emitter Voltage: 600 V;
IKP40N65F5XKSA1 by Infineon Technologies

IKP40N65F5XKSA1

Infineon Technologies

IKP40N65F5XKSA1 by Infineon is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 74A, and Pmax of 250W. Ideal for power control applications due to its fast turn-off time (toff) of 200ns and high collector-emitter voltage rating of 650V. Package style is flange mount with through-hole terminals.
IXGH10N170A by Littelfuse

IXGH10N170A

Littelfuse

IXGH10N170A by Littelfuse is an N-CHANNEL IGBT with 1700V max collector-emitter voltage, 10A max collector current, and 240ns nominal turn off time. Ideal for motor control applications due to its single configuration and through-hole terminal form.
STGWA40H60DLFB by STMicroelectronics

STGWA40H60DLFB

STMicroelectronics

STGWA40H60DLFB by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2V, IC of 80A, and Ptot of 283W. Ideal for applications requiring high power dissipation in a compact package such as motor drives, inverters, and industrial equipment.
FP40R12KT3BOSA1 by Infineon Technologies

FP40R12KT3BOSA1

Infineon Technologies

FP40R12KT3BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 55A. It has a nominal turn-off time of 610ns and is commonly used in applications requiring high power switching, such as motor drives and inverters.
FGH80N60FD2TU by Fairchild Semiconductor

FGH80N60FD2TU

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 290 W; Maximum Collector Current (IC): 80 A; Qualification: Not Qualified;
HGTG30N60A4D by Intersil

HGTG30N60A4D

Intersil

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 463 W; Maximum Collector Current (IC): 75 A; Additional Features: LOW CONDUCTION LOSS;