Littelfuse - MWT-0218-102DG-410

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: GAN; No. of Functions: 1;

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Power Supplies (V): 3;

WIDE BAND LOW POWER;

XB1007-QT-0G00 by M/a-com is a GAAS technology RF amplifier with 23 dB gain, operating from 4-11 GHz. It has a max input power of 20 dBm and operates b/w -55 to 85°C. Ideal for wideband medium power applications requiring surface mounting features.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Gain: 13 dB; Characteristic Impedance: 50 ohm;

Analog Devices' HMC8205BF10 is a wideband high-power RF amplifier with 25 dB gain and 35 dBm CW input power. Operating from 300 MHz to 6 GHz, it features a characteristic impedance of 50 ohms. Ideal for applications requiring high-power amplification in RF and microwave systems.

XP1050-QJ-0G00 by M/a-com Technology Solutions is a wide band high power RF amplifier with 15 dB gain, operating from 7-9 GHz. It can handle up to 25 dBm CW input power and operates b/w -40°C to 85°C. Ideal for applications requiring high power amplification in RF & microwave systems.

Infineon's BGA231N7E6330XTSA1 is a RF amplifier with 16dB gain, operating from 1550-1615MHz. It has a max input power of 0dBm and operates in temperatures ranging from -40 to 85°C. Ideal for narrowband low-power applications requiring a component construction.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Package Equivalence Code: TSSOP6,.08;

WIDE BAND MEDIUM POWER; Maximum Voltage Standing Wave Ratio: 4; Minimum Operating Temperature: -40 Cel; Minimum Operating Frequency: 2000 MHz; Maximum Input Power (CW): 34 dBm; Maximum Operating Frequency: 20000 MHz;

MAX2640AUT+T by Analog Devices is a wide band low power RF amplifier with 12.8 dB gain, operating from 300 MHz to 1500 MHz. It has a max input power of 5 dBm, operates on 3/5 V supplies, and draws a max current of 7.8 mA. This component is ideal for RF and microwave applications requiring surface mounting in temperatures ranging from -40°C to 125°C.

Qorvo's SBF-4089Z is a GAAS RF amplifier with 13.2 dB gain, operating from 0 to 500 MHz. It has a max input power of 19 dBm and operates at temperatures ranging from -40 to 85°C. Ideal for wideband low-power applications, it features a surface-mount package with matte tin terminals.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; JESD-609 Code: e3;

Analog Devices' HMC8500PM5ETR is a GaN wide band high power RF amplifier with 12 dB gain, operating from 10 MHz to 2800 MHz. It has a max input power of 33 dBm and VSWR of 6, suitable for applications requiring high power amplification in RF and microwave systems. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation at temperatures ranging from -40°C to 85°C.

The Mini-circuits LEE-39+ is a wide band low power RF amplifier with 18.5 dB gain, operating from 0 to 8000 MHz. It has a max input power of 13 dBm and VSWR of 1.6, suitable for surface mount applications in RF & microwave systems.

Mini-circuits LEE-29+ is a wideband low power RF amplifier with 13.3 dB gain, operating from 0 to 8000 MHz. It has a max input power of 15 dBm and VSWR of 1.6, suitable for various RF & microwave applications requiring amplification in the temperature range of -40 to 85°C.

WIDE BAND LOW POWER; Minimum Operating Temperature: -54 Cel; Gain: 6.5 dB; Construction: MODULE; Characteristic Impedance: 50 ohm; Maximum Operating Frequency: 250 MHz;

NARROW BAND LOW POWER; Terminal Finish: Matte Tin (Sn); JESD-609 Code: e3;

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1;

Analog Devices' HMC441LP3ETR is a GAAS RF amplifier with 10dB gain, operating from 6.5 to 13.5GHz, handling up to 15dBm CW input power. With a compact surface-mount package and low power consumption of 115mA at 5V, it's ideal for wideband applications in RF and microwave systems.