Littelfuse - MWT-0218-102DG-413

  1. Home
  2. Littelfuse - MWT-0218-102DG-413
MWT-0218-102DG-413 by Littelfuse

Image shown is a representation only.

Manufacturer Littelfuse
Manufacturer's Part Number MWT-0218-102DG-413
Description RF/Microwave Amplifiers; Package Body Material: CERAMIC; Technology: GAAS; Maximum Supply Current: 190 mA; Package Equivalence Code: FLNG,.4"H.SPACE; Maximum Operating Temperature: 105 Cel;
Datasheet MWT-0218-102DG-413 Datasheet
NAME DESCRIPTION
Package Body Material: CERAMIC
Package Equivalence Code: FLNG,.4"H.SPACE
Technology: GAAS
Maximum Operating Temperature: 105 Cel
Sub-Category: RF/Microwave Amplifiers
Maximum Supply Current: 190 mA
Minimum Operating Temperature: -55 Cel
Power Supplies (V): 8
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

MGA-62563-TR1G by Agilent Technologies

MGA-62563-TR1G

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Supply Current: 77 mA;
MAX2640AUT+T by Maxim Integrated

MAX2640AUT+T

Maxim Integrated

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Construction: COMPONENT;
HMC1087 by Hittite Microwave

HMC1087

Hittite Microwave

WIDE BAND MEDIUM POWER; Maximum Voltage Standing Wave Ratio: 4; Minimum Operating Temperature: -40 Cel; Minimum Operating Frequency: 2000 MHz; Maximum Input Power (CW): 34 dBm; Maximum Operating Frequency: 20000 MHz;
ECG008B-G by Qorvo

ECG008B-G

Qorvo

Qorvo's ECG008B-G is a wide band medium power RF amplifier with 13 dB gain and 50 ohm impedance. It operates from 0 to 4000 MHz, handling up to 15 dBm CW input power. Ideal for applications requiring high performance in RF & microwave systems.
HMC-AUH312 by Analog Devices

HMC-AUH312

Analog Devices

HMC-AUH312 by Analog Devices is a GAAS technology RF amplifier with 10 dB gain, operating from 500 MHz to 80 GHz. It has a max input power of 10 dBm and requires an 8V power supply. Ideal for wide band low power applications, this component is designed for surface mounting with a characteristic impedance of 50 ohms.
QPA9419 by Qorvo

QPA9419

Qorvo

RF/Microwave Amplifiers;
MAAM28000-A1G by M/a-com Technology Solutions

MAAM28000-A1G

M/a-com Technology Solutions

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: CERAMIC; Technology: GAAS; Construction: COMPONENT;
MMG3002NT1 by Motorola

MMG3002NT1

Motorola

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: TO-243;
NBB-400 by Rf Micro Devices

NBB-400

Rf Micro Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: CERAMIC; Technology: BIPOLAR; Minimum Operating Temperature: -45 Cel;
HMC1040LP3CE by Analog Devices

HMC1040LP3CE

Analog Devices

HMC1040LP3CE by Analog Devices is a wide band low power RF amplifier with 17 dB gain and 50 ohm impedance. It operates from 24 to 43.5 GHz, with a max input power of 5 dBm and a supply current of 85 mA. This PHEMT technology component is ideal for RF and microwave applications requiring high performance in a compact package.
NJG1150UA2-TE1 by New Japan Radio

NJG1150UA2-TE1

New Japan Radio

NARROW BAND LOW POWER;
CMPA801B025F-TB by Wolfspeed

CMPA801B025F-TB

Wolfspeed

WIDE BAND HIGH POWER;
CMPA801B030F1 by Wolfspeed

CMPA801B030F1

Wolfspeed

WIDE BAND HIGH POWER;
NBB-310-T1 by Qorvo

NBB-310-T1

Qorvo

Qorvo's NBB-310-T1 is a ceramic RF amplifier with 20 dBm CW input power, 9 dB gain, and 50 ohm impedance. Ideal for wide band low power applications from 0 to 12000 MHz, it operates b/w -45°C to 85°C. Suitable for surface mount installations with a voltage supply of 5V.
HMC797LP5E by Analog Devices

HMC797LP5E

Analog Devices

Analog Devices' HMC797LP5E is a wide band medium power RF amplifier with 11 dB gain and 23 dBm CW input power. Operating from -55 to 85°C, it covers frequencies from 0 to 22 GHz. With a VSWR of 7, this GaAs component is ideal for RF and microwave applications requiring high performance in plastic/epoxy packages.
NBB-300-T1 by Rf Micro Devices

NBB-300-T1

Rf Micro Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: CERAMIC; Technology: BIPOLAR; JESD-609 Code: e3;
MGA-82563-TR1G by Broadcom

MGA-82563-TR1G

Broadcom

Broadcom's MGA-82563-TR1G is a GAAS RF amplifier with 8.8dB gain, operating from 100MHz to 6GHz. It has a max input power of 13dBm and VSWR of 1.2, suitable for wideband low-power applications in RF and microwave systems. The component features a plastic/epoxy package, matte tin terminals, and operates b/w -40°C to 85°C.
NBB-310 by Rf Micro Devices

NBB-310

Rf Micro Devices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: CERAMIC; Technology: BIPOLAR; No. of Functions: 1;
MAX2839ETN+ by Maxim Integrated

MAX2839ETN+

Maxim Integrated

NARROW BAND LOW POWER; Terminal Finish: MATTE TIN; JESD-609 Code: e3;
MSA-1105-STR by Hewlett Packard

MSA-1105-STR

Hewlett Packard

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Additional Features: HIGH RELIABILITY; Maximum Voltage Standing Wave Ratio: 1.7; Gain: 10 dB; Maximum Operating Frequency: 1300 MHz;